Intrinsic amorphous and microcrystalline silicon by hot-wire-deposition for thin film solar cell applications

被引：44

作者：

Klein, S

Finger, F

Carius, R

Wagner, H

Stutzmann, M

机构：

[1] Forschungszentrum Julich, Inst Photovoltaik, D-52425 Julich, Germany

[2] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

THIN SOLID FILMS | 2001年 / 395卷 / 1-2期

关键词：

hot-wire CVD; structural properties; solar cells; silicon;

D O I：

10.1016/S0040-6090(01)01280-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of various deposition parameters on the electrical and optical properties and the structure of amorphous and microcrystalline silicon films was investigated for material prepared by hot-wire (HW) CVD in a new multichamber deposition system, designed for the development of thin film solar cells. Prior to the material studies, careful measurement of the real substrate temperature under the influence of additional HW heating was performed. While good electronic quality and solar cell performance was found for a-Si:H layers, the Lc-Si:H material showed very high spin densities, porosity and a characteristic structural inhomogeneity along the growth axis. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：305 / 309

页数：5

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