Substrate pump NMOS for ESD protection applications

被引：45

作者：

Duvvury, C ^{[1
]}

Ratnaswamy, S ^{[1
]}

Amerasekera, A ^{[1
]}

Cline, RA ^{[1
]}

Andresen, BH ^{[1
]}

Gupta, V ^{[1
]}

机构：

[1] Texas Instruments Inc, Silicon Technol Dev, Dallas, TX 75265 USA

来源：

ELECTRICAL OVERSTRESS/ELECTROSTATIC DISCHARGE SYMPOSIUM PROCEEDINGS, 2000 | 2000年

关键词：

D O I：

10.1109/EOSESD.2000.890022

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The use of a substrate pump to achieve uniform npn protection in a multi-finger NMOS is reported for advanced CMOS technologies with silicide. The novel feature of this device technique is the implementation of a floating guardring to effectively pump the local substrate of the protection NMOS. SPICE simulations are presented to illustrate the device concept as well as the device design optimization.

引用

页码：7 / 17

页数：5

共 15 条

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