SELID: A new 3D simulator for E-beam lithography

被引:7
作者
Rosenbusch, A
Glezos, N
Kalus, M
Raptis, I
机构
来源
16TH ANNUAL SYMPOSIUM ON PHOTOMASK TECHNOLOGY AND MANAGEMENT | 1996年 / 2884卷
关键词
E-beam lithography; diffusion equation; exposure and development simulation; E-beam proximity effect correction; process window; process optimization;
D O I
10.1117/12.262829
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In the e-beam world a simulator, comparable to well established optical simulators, has not been available so fat. SELID (Simulation of E-Beam Lithography in 3 Dimensions) closes this gap by providing a comprehensive simulation tool covering most aspects of today's advanced e-beam lithography, such as process optimization and parameter determination for the e-beam proximity effect correction. SELID consists of 4 major parts: the simulation of the exposure step, the post-exposure bake and the resist development, and the analysis part. On output it displays many different views into the exposed image, 2D exposure images, as well as 2D resist profiles and resist structures in full 3D rendering. This paper presents first results using SELID. The application to direct write will be demonstrated. A commercially available positive e-beam resist was used for electron beam direct write lithography applications. Process optimization and the accuracy of the simulator will be demonstrated. Moreover, the agreement between experiment and simulation will be investigated.
引用
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页码:435 / 441
页数:7
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