The interaction of Xe and Xe plus K with graphene

被引：4

作者：

Bostwick, Aaron ^{[1
]}

McChesney, Jessica L. ^{[1
,2
]}

Ohta, Taisuke ^{[1
,3
]}

Emtsev, Konstantin V. ^{[4
]}

Seyller, Thomas ^{[4
]}

Horn, Karsten ^{[3
]}

Rotenberg, Eli ^{[1
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Adv Light Source, Berkeley, CA 94720 USA

[2] Montana State Univ, Bozeman, MT 59717 USA

[3] Fritz Haber Inst Max Planck Gesell, Berlin, Germany

[4] Univ Erlangen Nurnberg, Inst Phys Kondensierten Mat, Erlangen, Germany

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 2011年 / 183卷 / 1-3期

关键词：

Graphene; Doped graphene; Epitaxial graphene; Rare-gas adsorption; GRAPHITE; PHOTOEMISSION; GAS; ENERGIES; SHIFTS; XENON;

D O I：

10.1016/j.elspec.2010.05.003

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

We have investigated the electronic properties of monolayer graphene with adsorbed layers of xenon or potassium, or a combination of the two. The formation of the first Xe layer is characterized by a dipole polarization which is quenched by a second Xe layer. By comparing K on Xe on graphene to K on bare graphene, we determine the K contribution to trigonal warping and mass renormalization due to electron-phonon coupling. The former is found to be small but significant, while the latter is shown to be negligible. Thus, previously determined values of electron-phonon coupling for K on graphene are shown to be intrinsic to doped graphene and not determined by the proximity of K ions to the graphene. Published by Elsevier B.V.

引用

页码：118 / 124

页数：7

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