Hydrogen-induced valence alternation state at SiO2 interfaces

被引：62

作者：

Afanas'ev, VV ^{[1
]}

Stesmans, A ^{[1
]}

机构：

[1] Katholieke Univ Leuven, Dept Phys, B-3001 Louvain, Belgium

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 80卷 / 23期

关键词：

D O I：

10.1103/PhysRevLett.80.5176

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Exposure of Si/SiO2 and SiC/SiO2 interfaces to hydrogen in the temperature range of 450-800 degrees C is found to produce a considerable density (up to 10(13) cm(-2)) of positively charged centers. The absence of any correlation between the charging process and the presence of Si dangling bond centers in SiO2 or at the Si/SiO2 interface indicates hydrogen bonding in a valence alternation state which is suggested to be an over-coordinated oxygen center [Si-2=OH](+) stabilized by SiO2 network rearrangement at the interface.

引用

页码：5176 / 5179

页数：4

共 26 条

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