Relaxor behavior and electromechanical properties of Pb(Mg1/3Nb2/3)O3 thin films

被引：61

作者：

Kighelman, Z ^{[1
]}

Damjanovic, D ^{[1
]}

Seifert, A ^{[1
]}

Sagalowicz, L ^{[1
]}

Setter, N ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, Dept Mat, Ceram Lab, CH-1015 Lausanne, Switzerland

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 16期

关键词：

D O I：

10.1063/1.121702

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pb(Mg1/3Nb2/3)O-3 (PMN) alkoxide precursor solutions were synthesized and used to prepare thin films by spin coating on TiO2/Pt/TiO2/SiO2/Si substrates. Many parameters like the use of homogeneous and stable precursor solutions and appropriate processing were used to greatly reduce the presence of the nonferroelectric pyrochlore phase. Transmission electron microscopy investigations, dielectric, electrostrictive, and direct current field induced piezoelectric measurements were carried out and have shown that PMN thin films exhibit a relaxor-like behavior. (C) 1998 American Institute of Physics. [S0003-6951(98)03142-8].

引用

页码：2281 / 2283

页数：3

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