Experimental characterization and modeling of a ferroelectric bulk channel field effect transistor with nonvolatile memory characteristics

被引：13

作者：

Chen, FY ^{[1
]}

Fang, YK ^{[1
]}

Sun, MJ ^{[1
]}

Chen, JR ^{[1
]}

机构：

[1] NATL TSING HUA UNIV,DEPT MAT SCI & ENGN,HSINCHU,TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 06期

关键词：

D O I：

10.1063/1.117900

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A ferroelectric bulk channel field effect transistor has been developed using a thin film of lead titanate (PbTiO3) deposited on a n/p(+) Si substrate by rf sputtering, in which the drain conductance changes in proportion to the remanent polarization of PbTiO3 thin film induced by the gate pulse voltage. Since the remanent polarization will stay a long time after the gate voltage is removed, the device possesses the memory characteristics. The device is a bulk channel structure and different from the reported surface channel type ferroelectric field effect transistor. Therefore, it possesses higher mobility. In this letter, current-voltage curves have been shown to compare with the theoretical analysis. The fit is quite good. (C) 1996 American Institute of Physics.

引用

页码：812 / 814

页数：3

共 7 条

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