Structural and electrical properties of sol-gel synthesized PLZT thin films

被引：19

作者：

Vijayaraghavan, C ^{[1
]}

Goel, TC ^{[1
]}

Mendiratta, RG ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Phys, New Delhi, India

来源：

IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION | 1999年 / 6卷 / 01期

关键词：

D O I：

10.1109/94.752012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin films of PLZT with PbTiO3 interlayers have been fabricated by using a sol-gel spin-on process. Three compositions of PLZT, namely 8/65/35, 15/40/60 and 18/30/70, have been deposited on platinum and quartz substrates and heat treated at 650 degrees C. All three compositions have crystallized in the perovskite phase. The 8/65/35 composition, which has been investigated in greater detail exhibits a low value of leakage current. It also exhibits polarization hysteresis, with E-c = 20 kV/cm and P-r = 25 mu C/cm(2).

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收藏

页码：69 / 72

页数：4

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