Possible origin of large response times and ambipolar diffusion lengths in hot-wire-CVD silicon films

被引：2

作者：

Schwarz, R ^{[1
]}

Múrias, T ^{[1
]}

Conde, JP ^{[1
]}

Brogueira, P ^{[1
]}

Chu, V ^{[1
]}

机构：

[1] Univ Tecn Lisboa, Dept Phys, Inst Super Tecn, P-1096 Lisbon, Portugal

来源：

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998 | 1998年 / 507卷

关键词：

D O I：

10.1557/PROC-507-799

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We measured the response time tau(R) and the ambipolar diffusion length L-amb in amorphous (a-Si:H) and microcrystalline silicon films (mu c-Si:H) prepared by hot-wire chemical vapor deposition (KW-CVD). The response times in the amorphous and microcrystalline HW films were larger by factors of 100 and 1000, respectively, than in standard PE-CVD a-Si:H films (1-2 mu s). The ambipolar diffusion length of the HW-CVD films was about twice as large as in conventional glow-discharge films. Strong doping of microcrystalline HW films with trimethylboron (TMB) led to a reduction of the response time. The results hint to a positive effect of the compact microstructure of HW-CVD films. We suggest the dark conductivity activation energy, E-act, and response time, tau(R), to be used as suitable parameters to describe optoelectronic film properties.

引用

页码：799 / 804

页数：6

共 13 条

[1] Doping of amorphous and microcrystalline silicon films deposited by hot-wire chemical vapor deposition using phosphine and trimethylboron [J].

Brogueira, P ;

Chu, V ;

Ferro, AC ;

Conde, JP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1997, 15 (06) :2968-2982

[2] Improved mobility of amorphous silicon thin-film transistors deposited by hot-wire chemical vapor deposition on glass substrates [J].

Chu, V ;

Jarego, J ;

Silva, H ;

Silva, T ;

Reissner, M ;

Brogueira, P ;

Conde, JP .

APPLIED PHYSICS LETTERS, 1997, 70 (20) :2714-2716

[3] The influence of hydrogen dilution and substrate temperature in hot-wire deposition of amorphous and microcrystalline silicon with filament temperatures between 1900 and 2500 degrees C [J].

Conde, JP ;

Brogueira, P ;

Castanha, R ;

Chu, V .

AMORPHOUS SILICON TECHNOLOGY - 1996, 1996, 420 :357-362

[4] Amorphous and microcrystalline silicon films obtained by hot-wire chemical vapour deposition using high filament temperatures between 1900 and 2500 degrees C [J].

Conde, JP ;

Brogueira, P ;

Chu, V .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1997, 76 (03) :299-308

[5]

MAHAN AH, 1991, MATER RES SOC SYMP P, V219, P673, DOI 10.1557/PROC-219-673

[6] Stability of hot-wire deposited amorphous-silicon thin-film transistors [J].

Meiling, H ;

Schropp, REI .

APPLIED PHYSICS LETTERS, 1996, 69 (08) :1062-1064

[7]

NELSON BP, 1994, P 12 EUR PHOT SOL EN

[8] Application of hot wire deposited intrinsic poly-silicon films in N-I-P cells and TFTS [J].

Rath, JK ;

van Zutphen, AJMM ;

Meiling, H ;

Schropp, REI .

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997, 1997, 467 :445-450

[9] Silicon network relaxation in amorphous hydrogenated silicon [J].

Remes, Z ;

Vanecek, M ;

Mahan, AH ;

Crandall, RS .

PHYSICAL REVIEW B, 1997, 56 (20) :12710-12713

[10] AMBIPOLAR TRANSPORT IN AMORPHOUS-SEMICONDUCTORS IN THE LIFETIME AND RELAXATION-TIME REGIMES INVESTIGATED BY THE STEADY-STATE PHOTOCARRIER GRATING TECHNIQUE [J].

RITTER, D ;

ZELDOV, E ;

WEISER, K .

PHYSICAL REVIEW B, 1988, 38 (12) :8296-8304

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