Microcavity effect on the electron-hole relative motion in semiconductor quantum wells

被引：25

作者：

Citrin, DS ^{[1
]}

Khurgin, JB

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[2] Johns Hopkins Univ, Dept Elect & Comp Engn, Baltimore, MD 21218 USA

来源：

PHYSICAL REVIEW B | 2003年 / 68卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.68.205325

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We rigorously find that for a quantum well embedded within a semiconductor microcavity near resonance with the 1s-exciton transition, the upper (lower) polariton is associated with an electron-hole relative-motion probability-density distribution larger (smaller) than the two-dimisional exciton Bohr radius if half the normal-mode splitting exceeds the 1s-exciton binding energy. In this case, the exciton continuum comprises an essential part of the description of the upper mode, leading to a strong asymmetry of the microcavity lines observed in transmission.

引用

页数：5

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