RBS and ERDA study of ion beam synthesised amorphous gallium nitride

被引：20

作者：

Barradas, NP ^{[1
]}

Almeida, SA ^{[1
]}

Jeynes, C ^{[1
]}

Knights, AP ^{[1
]}

Silva, SRP ^{[1
]}

Sealy, BJ ^{[1
]}

机构：

[1] Univ Surrey, Sch Elect Engn Informat Technol & Math, Guildford GU2 5XH, Surrey, England

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1999年 / 148卷 / 1-4期

基金：

英国工程与自然科学研究理事会;

关键词：

RBS; ERDA; simulated annealing; GaN; amorphous semiconductor;

D O I：

10.1016/S0168-583X(98)00702-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Amorphous GaN was synthesised by Ga implantation into N-rich PECVD a-SiNx:H films after annealing between 200 degrees C and 500 degrees C. Similar implantation into Si-rich films did not form GaN. X-ray Photoelectron Spectroscopy (XPS) demonstrated the presence of GaN bonds in the former, but not the latter, case. Rutherford backscattering (RBS) and Elastic Recoil Detection Analysis (ERDA) demonstrated that implanted Ga substituted for Si in the N-rich films but not in the Si-rich ones. The RBS/ERDA analysis used self-consistent fitting of multiple spectra using the combinatorial optimisation Simulated Annealing algorithm, followed by a determination of the confidence limits on the depth profiles obtained using Bayesian Inference. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：463 / 467

页数：5

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