Diode-pumped erbium-ytterbium-glass laser passively Q-switched with a PbS semiconductor quantum-dot doped glass

被引:49
作者
Philipps, JF
Töpfer, T
Ebendorff-Heidepriem, H
Ehrt, D
Sauerbrey, R
Borrelli, NF
机构
[1] Univ Jena, Inst Opt & Quantenelekt, D-07743 Jena, Germany
[2] Univ Jena, Otto Schott Inst Glaschem, D-07743 Jena, Germany
[3] Corning Inc, Technol Grp, Ctr Res & Dev, Corning, NY 14831 USA
来源
APPLIED PHYSICS B-LASERS AND OPTICS | 2001年 / 72卷 / 02期
关键词
D O I
10.1007/s003400000415
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Q-switched and cw operation of different diode-pumped erbium-ytterbium doped glasses at 1.5 mum has been studied in a compact microlaser setup. For Q-switching we used a novel PbS semiconductor quantum-dot doped glass which offers low saturation intensity compared with typical absorbers used and a fast time response. The cw laser delivered output powers of 35 mW with slope efficiencies of 16%. In Q-switched operation pulse energies of 1 muJ at repetition rates of 1-2 kHz and pulse durations of about 30-50 ns, depending on absorber thickness were obtained.
引用
收藏
页码:175 / 178
页数:4
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