An organic/Si nanowire hybrid field configurable transistor

被引：32

作者：

Lai, Qianxi ^{[1
,2
]}

Li, Zhiyong ^{[3
]}

Zhang, Lei ^{[1
,2
]}

Li, Xuema ^{[3
]}

Stickle, William F. ^{[4
,5
]}

Zhu, Zuhua ^{[1
,2
]}

Gu, Zhen ^{[1
,2
]}

Kamins, Theodore I. ^{[3
]}

Williams, R. Stanley ^{[3
]}

Chen, Yong ^{[1
,2
]}

机构：

[1] Univ Calif Los Angeles, Dept Mech & Aerosp Engn, Los Angeles, CA 90095 USA

[2] Univ Calif Los Angeles, Calif NanoSyst Inst, Los Angeles, CA 90095 USA

[3] Hewlett Packard Labs, Palo Alto, CA 94304 USA

[4] Hewlett Packard Corp, Adv Mat Proc Lab, Corvallis, OR 97330 USA

[5] Hewlett Packard Corp, Adv Diagnost Lab, Corvallis, OR 97330 USA

来源：

NANO LETTERS | 2008年 / 8卷 / 03期

关键词：

D O I：

10.1021/nl073112y

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report a field configurable transistor (FCT) fabricated on a Si nanowire FET platform by integrating a thin film of conjugated polymer poly[2-methoxy-5-(2'-ethylhexyloxy)-p-phenylene vinylene] (MEH-PPV) and an ionic conductive layer (RbAg4I5) into the gate. The FCT can be precisely configured to desired nonvolatile analog state dynamically, repeatedly, and reversibly by controlling the concentration of iodide ions in the MEH-PPV layer with a gate voltage. The flexible configurability and plasticity of the FCT could facilitate field-programmable circuits for defect-tolerance and synapse-like devices for learning.

引用

页码：876 / 880

页数：5

共 18 条

[1] Nanoscale molecular-switch crossbar circuits [J].

Chen, Y ;

Jung, GY ;

Ohlberg, DAA ;

Li, XM ;

Stewart, DR ;

Jeppesen, JO ;

Nielsen, KA ;

Stoddart, JF ;

Williams, RS .

NANOTECHNOLOGY, 2003, 14 (04) :462-468

[2] Nanoscale molecular-switch devices fabricated by imprint lithography [J].

Chen, Y ;

Ohlberg, DAA ;

Li, XM ;

Stewart, DR ;

Williams, RS ;

Jeppesen, JO ;

Nielsen, KA ;

Stoddart, JF ;

Olynick, DL ;

Anderson, E .

APPLIED PHYSICS LETTERS, 2003, 82 (10) :1610-1612

[3] High performance silicon nanowire field effect transistors [J].

Cui, Y ;

Zhong, ZH ;

Wang, DL ;

Wang, WU ;

Lieber, CM .

NANO LETTERS, 2003, 3 (02) :149-152

[4] Carbon nanotube inter- and intramolecular logic gates [J].

Derycke, V ;

Martel, R ;

Appenzeller, J ;

Avouris, P .

NANO LETTERS, 2001, 1 (09) :453-456

[5] A single-transistor silicon synapse [J].

Diorio, C ;

Hasler, P ;

Minch, A ;

Mead, CA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (11) :1972-1980

[6] Nonvolatile memory and programmable logic from molecule-gated nanowires [J].

Duan, XF ;

Huang, Y ;

Lieber, CM .

NANO LETTERS, 2002, 2 (05) :487-490

[7] ON THE APPROXIMATE REALIZATION OF CONTINUOUS-MAPPINGS BY NEURAL NETWORKS [J].

FUNAHASHI, K .

NEURAL NETWORKS, 1989, 2 (03) :183-192

[8] CRYSTAL STRUCTURE OF SOLID ELECTROLYTE RBAG4I5 [J].

GELLER, S .

SCIENCE, 1967, 157 (3786) :310-&

[9] Reconfigurable computing and electronic nanotechnology [J].

Goldstein, S ;

Budiu, M ;

Mishra, M ;

Venkataramani, G .

IEEE INTERNATIONAL CONFERENCE ON APPLICATION-SPECIFIC SYSTEMS, ARCHITECTURES, AND PROCESSORS, PROCEEDINGS, 2003, :132-142

[10] A defect-tolerant computer architecture: Opportunities for nanotechnology [J].

Heath, JR ;

Kuekes, PJ ;

Snider, GS ;

Williams, RS .

SCIENCE, 1998, 280 (5370) :1716-1721

← 1 2 →