Light-induced defect states in hydrogenated amorphous silicon centered around 1.0 and 1.2 eV from the conduction band edge

被引：18

作者：

Pearce, JM ^{[1
]}

Deng, J ^{[1
]}

Collins, RW ^{[1
]}

Wronski, CR ^{[1
]}

机构：

[1] Penn State Univ, Ctr Thin Film Devices, University Pk, PA 16801 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 18期

关键词：

Conduction band edge - Hydrogenated amorphous silicon - Light induced defect states;

D O I：

10.1063/1.1624637

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To take into account the presence of multiple light-induced defect states in hydrogenated amorphous silicon (a-Si:H) the evolution of the entire spectra of photoconductive subgap absorption, alpha(hnu), has been analyzed. Using this approach two distinctly different light-induced defect states centered around 1.0 and 1.2 eV from the conduction band edge are clearly identified. Results are presented on their evolution and respective effects on carrier recombination that clearly point to the importance of these states in evaluating the stability of different a-Si:H solar cell materials, as well as elucidating the origin of the Staebler-Wronski effect. (C) 2003 American Institute of Physics.

引用

页码：3725 / 3727

页数：3

共 15 条

[1] Development in understanding and controlling the Staebler-Wronski effect in a-Si:H [J].

Fritzsche, H .

ANNUAL REVIEW OF MATERIALS RESEARCH, 2001, 31 :47-79

[2] CHARGED DEFECT STATES IN INTRINSIC HYDROGENATED AMORPHOUS-SILICON FILMS [J].

GUNES, M ;

WRONSKI, CR ;

MCMAHON, TJ .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (04) :2260-2263

[3] ENERGY-DEPENDENCE OF THE OPTICAL MATRIX ELEMENT IN HYDROGENATED AMORPHOUS AND CRYSTALLINE SILICON [J].

JACKSON, WB ;

KELSO, SM ;

TSAI, CC ;

ALLEN, JW ;

OH, SJ .

PHYSICAL REVIEW B, 1985, 31 (08) :5187-5198

[4] An improved analysis for band edge optical absorption spectra in hydrogenated amorphous silicon from optical and photoconductivity measurements [J].

Jiao, L ;

Chen, I ;

Collins, RW ;

Wronski, CR ;

Hata, N .

APPLIED PHYSICS LETTERS, 1998, 72 (09) :1057-1059

[5] Initial, rapid light-induced changes in hydrogenated amorphous silicon materials and solar cell structures: The effects of charged defects [J].

Jiao, LH ;

Liu, HY ;

Semoushikina, S ;

Lee, Y ;

Wronski, CR .

APPLIED PHYSICS LETTERS, 1996, 69 (24) :3713-3715

[6]

Kondo M., 2001, 12 INT PVSEC JEJ KOR, P41

[7]

KOVAL R, 2000, MAT RES SOC S P, V609

[8]

PEARCE J, 2001, MAT RES SOC S P, V664

[9]

PEARCE JM, 2002, 17 EUR PV SOL EN C P, V3, P2842

[10]

PEARCE JM, 2002, 29 IEEE PHOT SPEC C, P1101

← 1 2 →