Self-structuring of buried SiO2 precipitate layers during IBS: A computer simulation

Computer simulations of Ostwald ripening during the annealing of low-dose implanted SIMOX wafers are presented. For this aim, we developed a new model, which allows the simulation of Ostwald ripening of infinite buried layers of precipitates. Under appropriate conditions, Ostwald ripening leads to a spatial self-structuring of these precipitate ensembles. The structures, found by computer simulations, are very similar to experimentally observed precipitate patterns. The characteristic wavelength of the structures was found to be proportional to the diffusional screening length of the precipitate ensemble. Based on our computer simulations we predict a new fabrication method for a buried ''nanopipe'' of SiO2, filled with silicon.