Magnetization of the fractional quantum Hall states

被引：49

作者：

Meinel, I

Hengstmann, T

Grundler, D

Heitmann, D

Wegscheider, W

Bichler, M

机构：

[1] Univ Hamburg, Inst Angew Phys, D-20355 Hamburg, Germany

[2] Univ Hamburg, Zentrum Mikrostrukturforsch, D-20355 Hamburg, Germany

[3] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 82卷 / 04期

关键词：

D O I：

10.1103/PhysRevLett.82.819

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We observe electron magnetism originating from fractional quantum Hall states in single-layered GaAs heterojunctions. This magnetization is entirely governed by electron-electron interaction effects. The studies were performed at temperatures between 0.3 and 7 K on gated high-mobility two-dimensional electron systems. We observe oscillations in the magnetic moment at various fractional filling factors, both for nu < 1 and nu > 1. which persist up to 3.8 K. Most prominent features are found at filling factors 1/3, 2/3, 4/5, and 8/5. In addition, an intrinsic strongly asymmetric magnetization around nu = 1 is observed.

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页码：819 / 822

页数：4

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