Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

被引：190

作者：

Vincent, B. ^{[1
]}

Gencarelli, F. ^{[1
,4
]}

Bender, H. ^{[1
]}

Merckling, C. ^{[1
]}

Douhard, B. ^{[1
]}

Petersen, D. H. ^{[2
]}

Hansen, O. ^{[2
]}

Henrichsen, H. H. ^{[3
]}

Meersschaut, J. ^{[1
]}

Vandervorst, W. ^{[1
,5
]}

Heyns, M. ^{[1
,6
]}

Loo, R. ^{[1
]}

Caymax, M. ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Tech Univ Denmark, DTU Nanotech, Dept Micro & Nanotechnol, DK-2800 Lyngby, Denmark

[3] CAPRES AS, Sc DTU, DK-2800 Lyngby, Denmark

[4] Katholieke Univ Leuven, MTM, B-3001 Louvain, Belgium

[5] Katholieke Univ Leuven, IKS, B-3001 Louvain, Belgium

[6] Tech Univ Denmark, CINF, Lyngby, Denmark

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 15期

关键词：

annealing; chemical interdiffusion; chemical vapour deposition; germanium alloys; Hall mobility; hole mobility; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; tin alloys; SEMICONDUCTORS; SILICON;

D O I：

10.1063/1.3645620

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we propose an atmospheric pressure-chemical vapor deposition technique to grow metastable GeSn epitaxial layers on Ge. We report the growth of defect free fully strained undoped and in-situ B doped GeSn layers on Ge substrates with Sit contents up to 8%. Those metastable layers stay fully strained after 30 min anneal in N-2 at 500 degrees C.; Ge-Sn interdiffusion is seen at 500 degrees C but not at lower temperature. B is 100% active in the in-situ GeSn:B layers up to a concentration of 1.7 x 10(19) cm(-3). GeSn:B provides slightly lower Hall hole mobility values than in pure p-type Ge especially for low B concentrations. (C) 2011 American Institute of Physics [doi.10.1063/1.3645620]

引用

页数：3

共 18 条

[1]

[Anonymous], J VAC SCI TECHNOL B

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