Exciton emission in LaF3 crystals

被引：3

作者：

Radzhabov, E

Nepomnyashikh, AI

机构：

来源：

PROCEEDINGS OF THE 13TH INTERNATIONAL CONFERENCE ON DEFECTS IN INSULATING MATERIALS - ICDIM 96 | 1997年 / 239-卷

关键词：

exciton; luminescence; trifluorides; absorption; decay; vacuum ultraviolet;

D O I：

10.4028/www.scientific.net/MSF.239-241.275

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The ultraviolet photoluminescence at 4.1 eV was found in all LaF3 samples, with near 100% quantum yield at 78 K. Emission excited near interband transitions (peak at 10.5 eV). Decay time of 4.1 eV emission increased continuously from 6 mu s at 290 K up to 600 mu s at 12 K All these features allow us to assign this 4.1 eV band to the emission of triplet self-trapped excitons in LaF3 crystals.

引用

页码：275 / 278

页数：4

共 8 条

[1] VACANCY DISTRIBUTION AND IONIC MOTION IN LAF3 STUDIED BY F-19 NMR [J].