Zr-Ce oxides as candidates for optically passive counter electrodes

被引:25
作者
Veszelei, M [1 ]
Mattsson, MS [1 ]
Kullman, L [1 ]
Azens, A [1 ]
Granqvist, CG [1 ]
机构
[1] Univ Uppsala, Angstrom Lab, Dept Mat Sci, S-75121 Uppsala, Sweden
关键词
solid state ionics; ion conduction; thin films; optical properties; sputter deposition;
D O I
10.1016/S0927-0248(98)00132-9
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Zr-Ce oxide films with compositions from pure Zr oxide to pure Ce oxide were made by reactive DC magnetron co-sputtering. The composition and structure were determined by Rutherford backscattering and X-ray diffraction. Pure Ce oxide films have high charge capacity and are optically passive under charge insertion; they are, however, chemically unstable in an electrolyte of LiClO4 in propylene carbonate. Pure Zr oxide has practically zero charge capacity. Zr-Ce oxide films have high (above 80%) optical transmittance, high charge capacity, and good chemical stability. These films remain fully transparent irrespective of their degree of lithiation, which may be reconciled with electrons accommodating 4f states of Ce. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:223 / 230
页数:8
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