In situ conductance measurement of surface phases on silicon by the four-probe method

被引：1

作者：

Belous, IA

Utas, OV

Tsukanov, DA

Lifshits, VG

机构：

[1] Vladivostok State Univ Econ & Serv, Vladivostok 690600, Russia

[2] Far E State Univ, Vladivostok 690600, Russia

[3] Russian Acad Sci, Far E Div, Inst Automat & Control Proc, Vladivostok 690041, Russia

来源：

INSTRUMENTS AND EXPERIMENTAL TECHNIQUES | 2001年 / 44卷 / 05期

基金：

俄罗斯基础研究基金会;

关键词：

Silicon; Physical Chemistry; Measurement Error; Silicon Substrate; Measurement Rate;

D O I：

10.1023/A:1012374313494

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The experimental chamber, automation system, and method for measuring the conductance of surface phases on silicon are described. This chamber is intended for measuring the conductance of superthin films and surface phases on single-crystal silicon substrates by the four-probe method under ultrahigh vacuum conditions (10(-10) Torr). The system is controlled by a computer and contains 12-bit analog-to-digital and digital-to-analog, converters. The measurement error is less than or equal to0.5%. The measurement rate is 10 points/s.

引用

页码：698 / 699

页数：2