Microstructure of magnetron sputtered PLZT thin films on sapphire

被引：6

作者：

Tunaboylu, B ^{[1
]}

Harvey, P ^{[1
]}

Esener, SC ^{[1
]}

机构：

[1] Univ Calif San Diego, Mat Sci Program, Dept ECE, La Jolla, CA 92093 USA

来源：

INTEGRATED FERROELECTRICS | 1998年 / 19卷 / 1-4期

关键词：

PLZT films; sputtering; rapid thermal annealing; furnace annealing; microstructure; film characterization;

D O I：

10.1080/10584589808012693

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The microstructural development and crystal structures of sputtered PLZT 9/65/35 films on r-plane sapphire with respect to deposition/annealing conditions were studied. The films were deposited at substrate temperatures below 500 degrees C and annealed in the range 700 degrees to 730 degrees C for 1 min to 20 min for complete perovskite formation either by rapid thermal annealing (RTA) or furnace annealing (FA). The optical transparency was excellent with smooth surfaces in the stoichiometric films but reduced in the Pb-deficient films. The grain sizes in the films varied from 0.1 mu m to 0.8 mu m and 0.2 mu m to 1.2 mu m after RTA and FA respectively.

引用

页码：11 / 32

页数：22

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