Thermooptic investigation of impurity centers in Cu-doped Bi12SiO20 crystals

被引：5

作者：

Panchenko, TV ^{[1
]}

机构：

[1] Dnepropetrovsk Natl Univ, UA-320625 Dnepropetrovsk, Ukraine

来源：

PHYSICS OF THE SOLID STATE | 1998年 / 40卷 / 07期

关键词：

D O I：

10.1134/1.1130504

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Temperature dependences of the optical absorption of BSO:Cu crystals were investigated at photon energies between 1.36 and 3.46 eV and temperatures between 85 and 700 K. These dependences are analyzed for the energy model of a partially compensated p-type semiconductor taking into account the temperature dependence of the concentration of shallow and deep ionized accepters. (C) 1998 American Institute of Physics.

引用

页码：1135 / 1139

页数：5

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