Electron g factor engineering in III-V semiconductors for quantum communications

被引：100

作者：

Kosaka, H ^{[1
]}

Kiselev, AA

Baron, FA

Kim, KW

Yablonovitch, E

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90024 USA

[2] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 07期

关键词：

D O I：

10.1049/el:20010314

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An entanglement-preserving photodetector converts photon polarisation to electron spin. Up and down spin must respond equally to oppositely polarised photons, creating a requirement for degenerate spin energies, g(e) similar or equal to 0, for electrons. The authors present a plot of g(e) factor against lattice constant, analogous to bandgap against lattice constant. that can be used for g factor engineering of III-V alloys and quantum wells.

引用

页码：464 / 465

页数：2

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