Stimulated emission in erbium-doped silicon structures under optical pumping

被引：8

作者：

Bresler, MS

Gusev, OB

Terukov, EI

Yassievich, IN

Zakharchenya, BP

Emel'yanov, VI

Kamenev, BV

Kashkarov, PK

Konstantinova, EA

Timoshenko, VY

机构：

[1] AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Moscow MV Lomonosov State Univ, Moscow, Russia

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 81卷 / 1-3期

基金：

俄罗斯基础研究基金会;

关键词：

erbium-doped silicon; stimulated emission; optical pumping;

D O I：

10.1016/S0921-5107(00)00702-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Stimulated emission of erbium ions inserted in the matrix of amorphous hydrogenated silicon was first observed under optical pumping. A 'homogeneous' model of lasing in such structure was developed taking into account the saturation of the active medium. It is demonstrated that the generation regime is possible only in the case when the concentration of optically active erbium ions in the medium exceeds some threshold value determined by losses in the resonator. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：52 / 55

页数：4

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