DC sputtered indium-tin oxide transparent cathode for organic light-emitting diode

被引：28

作者：

Chen, HY ^{[1
]}

Qiu, CF ^{[1
]}

Wong, M ^{[1
]}

Kwok, HS ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Ctr Display Res, Kowloon, Hong Kong, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 05期

关键词：

indium-tin oxide; organic light-emitting diodes; sputtering; top-emission; transparent cathode;

D O I：

10.1109/LED.2003.812550

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance of top-emitting organic light-emitting diodes depends not just on the choice of the transparent cathodes but also on their techniques of formation. Compared to the damage induced by radio frequency sputtering of indium-tin oxide cathode, that induced by dc sputtering was verified to be less severe and relatively independent of the sputtering power. Consequently, a high dc sputtering power of 120 W could be employed to achieve a high deposition rate of 0.1 nm/s. Adequate emission efficiency was maintained, even with a relatively thin 7-nm copper (II) phthalocyanine buffer layer.

引用

页码：315 / 317

页数：3

共 13 条

[1] Characterization of a RF/dc-magnetron discharge for the sputter deposition of transparent and highly conductive ITO films [J].