Novel superconducting semiconducting superlattices: Dislocation-induced superconductivity?

被引：33

作者：

Fogel, NY

Pokhila, AS

Bomze, YV

Sipatov, AY

Fedorenko, AI

Shekhter, RI

机构：

[1] Kharkov Low Temp Phys & Engn Inst, UA-310164 Kharkov, Ukraine

[2] Kharkov Polytech Univ, UA-310002 Kharkov, Ukraine

[3] Chalmers Univ Technol, Dept Appl Phys, S-41296 Gothenburg, Sweden

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 86卷 / 03期

关键词：

D O I：

10.1103/PhysRevLett.86.512

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Novel superconducting superlattices with transition temperature in the range 2.5-6.4 K consisting only of semiconducting materials are discovered. Among them there are multilayers, including a wide-gap semiconductor as one of the components. It is shown that superconductivity is connected with the interfaces between two semiconductors containing regular grids of the misfit dislocations. The possibility of the dislocation-induced superconductivity is discussed.

引用

页码：512 / 515

页数：4

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