Raman study for E2 phonon of ZnO in Zn1-xMnxO nanoparticles -: art. no. 086105

被引：98

作者：

Wang, JB

Zhong, HM

Li, ZF

Lu, W ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

[2] Xiangtan Univ, Dept Phys, Xiangtan 411105, Hunan, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2005年 / 97卷 / 08期

关键词：

D O I：

10.1063/1.1865340

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Raman scattering at room temperature is reported in Zn1-xMnxO nanoparticles for the range of 0 <= x <= 0.15. The effect of compositional disorder is obtained by analyzing the broadening and asymmetry of the first-order E-2(high) phonon mode. It is found that the Raman line shapes for the ZnO E-2(high) phonon in Zn1-xMnxO alloys can be well described by the spatial correlation model. It is shown that the substitutional disorder can introduce changes in the linewidth, line center position, and asymmetry of the first-order E-2(high) phonon mode in Zn1-xMnxO nanoparticles. (C) 2005 American Institute of Physics.

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页数：3

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共 17 条

[1] Meet the spin doctors . . . [J].

Ball, P .

NATURE, 2000, 404 (6781) :918-920

[2] THE EFFECTS OF MICROCRYSTAL SIZE AND SHAPE ON THE ONE PHONON RAMAN-SPECTRA OF CRYSTALLINE SEMICONDUCTORS [J].

CAMPBELL, IH ;

FAUCHET, PM .

SOLID STATE COMMUNICATIONS, 1986, 58 (10) :739-741

[3] Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J].

Dietl, T ;

Ohno, H ;

Matsukura, F ;

Cibert, J ;

Ferrand, D .

SCIENCE, 2000, 287 (5455) :1019-1022

[4] Effects of high-dose Mn implantation into ZnO grown on sapphire [J].

Heo, YW ;

Ivill, MP ;

Ip, K ;

Norton, DP ;

Pearton, SJ ;

Kelly, JG ;

Rairigh, R ;

Hebard, AF ;

Steiner, T .

APPLIED PHYSICS LETTERS, 2004, 84 (13) :2292-2294

[5]

HEWOT AW, 1970, SOLID STATE COMMUN, V8, P187

[6] Structural and magnetic properties of transition metal substituted ZnO [J].

Kolesnik, S ;

Dabrowski, B ;

Mais, J .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (05) :2582-2586

[7] Raman investigation of anharmonicity and disorder-induced effects in Zn1-xBexSe epifilms -: art. no. 075204 [J].

Lin, LY ;

Chang, CW ;

Chen, WH ;

Chen, YF ;

Guo, SP ;

Tamargo, MC .

PHYSICAL REVIEW B, 2004, 69 (07)

[8] RAMAN-SCATTERING IN ALLOY SEMICONDUCTORS - SPATIAL CORRELATION MODEL [J].

PARAYANTHAL, P ;

POLLAK, FH .

PHYSICAL REVIEW LETTERS, 1984, 52 (20) :1822-1825

[9] Advances in wide bandgap materials for semiconductor spintronics [J].

Pearton, SJ ;

Abernathy, CR ;

Norton, DP ;

Hebard, AF ;

Park, YD ;

Boatner, LA ;

Budai, JD .

MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2003, 40 (04) :137-168

[10] Magnetic properties of Mn doped ZnO tetrapod structures [J].

Roy, VAL ;

Djurisic, AB ;

Liu, H ;

Zhang, XX ;

Leung, YH ;

Xie, MH ;

Gao, J ;

Lui, HF ;

Surya, C .

APPLIED PHYSICS LETTERS, 2004, 84 (05) :756-758