Spin-dependent tunneling in HfO2 tunnel junctions

被引:98
作者
Platt, CL
Dieny, B
Berkowitz, AE
机构
[1] UNIV CALIF SAN DIEGO,CTR MAGNET RECORDING RES,LA JOLLA,CA 92093
[2] CEA,DEPT RECH FONDAMENTALE MAT CONDENSEE,SP2M,NM,F-38054 GRENOBLE 9,FRANCE
关键词
D O I
10.1063/1.117537
中图分类号
O59 [应用物理学];
学科分类号
摘要
We identified reactively sputtered HfO2 as a particularly good material for making thin insulating barriers for spin-dependent tunnel junctions. This material allows one to form pinhole-free tunnel barriers with good transmission of the spin polarization of the tunneling electrons. Magnetic tunnel junctions consisting of a thin layer of HfO2 sandwiched between transition metal electrodes (Co and Fe, for instance) exhibit changes of tunnel resistance up to 30% at low temperature as a function of applied field. This effect can be used in a variety of magnetic field sensing applications or in magnetic random access memory. (C) 1996 American Institute of Physics.
引用
收藏
页码:2291 / 2293
页数:3
相关论文
共 18 条