Electrical and optical properties of CH4/H2 RF plasmas for diamond-like thin film deposition

被引：8

作者：

Amanatides, E ^{[1
]}

Mataras, D ^{[1
]}

机构：

[1] Univ Patras, Dept Chem Engn, Plasma Technol Lab, Patras 26504, Greece

来源：

关键词：

amorphous hydrogenated carbon; bias growth; optical emission; diamond-like carbon;

D O I：

10.1016/j.diamond.2004.11.008

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A study of the effect of the substrate bias potential on the electrical properties of CH4/H-2 discharges used for depositing a-C:H thin films on polymeric substrates was performed. Accurate measurements of the rf power and impedance based on recording voltage and current waveforms were applied for the determination of the effect of substrate bias. In addition, spatially resolved emission spectroscopy was utilized for following the effect of bias on the spatial production of species. The results show an increase of the total discharge power consumption and the production of species with the bias voltage. It is shown that apart from modifying ion bombardment, substrate biasing leads at the same time to significant changes in the discharge structure and the density of film precursors. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：292 / 295

页数：4

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