Characterization of silicon microstrip detectors using an infrared laser system

被引：20

作者：

Abt, I ^{[1
]}

Masciocchi, S ^{[1
]}

Moshous, B ^{[1
]}

Perschke, T ^{[1
]}

Richter, RH ^{[1
]}

Riechmann, K ^{[1
]}

Wagner, W ^{[1
]}

机构：

[1] Max Planck Inst Phys, D-80805 Munich, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1999年 / 423卷 / 2-3期

关键词：

silicon microstrip detector; infrared laser; charge sharing; depletion mapping;

D O I：

10.1016/S0168-9002(98)01337-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

An infrared laser system with variable wavelength is used to study fundamental properties of silicon microstrip detectors. Results of measurements concerning charge sharing among adjacent readout strips and depletion mapping are presented. The results are interpreted in a model framework which describes the charge sharing with the help of the so-called eta-function. The wavelength dependence of the eta-function is studied. Surface effects important for short wavelengths are observed. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：303 / 319

页数：17

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