Non-linear piezoelectric properties of the thin Pb(ZrxTi1-x)O3 (PZT) films deposited on the Si-substrate

In this paper some non-linear piezoelectric properties are investigated in lead zirconate-titanate Pb(ZrxTi1-x)O-3 (PZT) thin films, sputtered on the Si/SiO2/Ti/Pt substrates. The thin PZT films were optimised by technology conditions (sputtering (ZrxTi1-x) composition, PZT film thickness, buffer and seeding layers thickness). The significant piezoelectric response for PZT (60/40) and near MPB PZT (54/46) rhombohedral compositions, (1 1 1) and (0 0 1) orientations and thickness of 1.02-2.2 mu m has been observed. The effective piezoelectric coefficient d(33) = 225 pC/N was found for high electric field of 10 MV/m and PZT (60/40) composition. The non-linear piezoelectric response, depending on electric field, frequency and temperature, was studied experimentally using an original double-beam laser interferometer and an optical cryostat. The temperature dependence of the thickness strain was investigated by laser interferometer in the temperature range -33 to 57 degrees C. The Pb(ZrxTi1-x)O-3-Si/SiO2/Ti/Pt samples were prepared in the University of Valenciennes (France), and measured in the Laboratory of laser interferometry at the Technical University of Liberec (Czech Republic). (c) 2005 Elsevier Ltd. All rights reserved.