Direct evidence of Cd diffusion into Cu(In,Ga)Se2 thin films during chemical-bath deposition process of CdS films

被引：252

作者：

Nakada, T ^{[1
]}

Kunioka, A ^{[1
]}

机构：

[1] Aoyama Gakuin Univ, Dept Elect Engn & Elect, Setagaya Ku, Tokyo 157, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 17期

关键词：

D O I：

10.1063/1.123875

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The diffusion behavior at the Cu(In, Ga)Se-2 (CIGS)/CdS interface of high efficiency CIGS thin film solar cells has been investigated using energy dispersive x-ray spectroscopy (EDX) and transmission electron microscopy. CdS layers were deposited on CIGS thin films using the chemical bath deposition (CBD) process. EDX analysis revealed that Cd was present in the CIGS layer approximately 100 Angstrom from the interface boundary. In contrast to the diffusion of Cd, the Cu concentration decreased near the surface of the CIGS film, suggesting substitution of Cd for Cu atoms. These results are direct evidence of Cd diffusion into CIGS thin films during the CBD process. (C) 1999 American Institute of Physics. [S0003-6951(99)00617-8].

引用

页码：2444 / 2446

页数：3

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