Evidence of carbon-carbon bond formation on GaAs(100) via Fischer-Tropsch methylene insertion reaction mechanism

被引：5

作者：

Kemp, NT ^{[1
]}

Singh, NK ^{[1
]}

机构：

[1] Univ New S Wales, Sch Chem, Sydney, NSW 2052, Australia

来源：

CHEMICAL COMMUNICATIONS | 2005年 / 34期

关键词：

D O I：

10.1039/b506195d

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Sequential multiple methylene (CH2) insertions into adsorbed methyl species on clean gallium-rich GaAs(100)-(4 x 1) occur to form higher alkenes (ethene, propene, butene) and two higher alkyl iodides (iodoethane, iodopropane), not reported for a semiconductor surface previously.

引用

页码：4348 / 4350

页数：3

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