Microplasma-induced surface engineering of silicon nanocrystals in colloidal dispersion

被引：48

作者：

Svrcek, V. ^{[1
]}

Mariotti, D. ^{[1
,2
]}

Kondo, M. ^{[1
]}

机构：

[1] AIST, Res Ctr Photovolta, Tsukuba, Ibaraki 3058568, Japan

[2] Univ Ulster, Nanotechnol & Adv Mat Res Inst, Newtownabbey BT37 OQB, North Ireland

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 16期

关键词：

SI NANOCRYSTALS; ELECTRONIC-STRUCTURE; QUANTUM DOTS; NANOPARTICLES; SPECTROSCOPY; WATER;

D O I：

10.1063/1.3505329

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on an atmospheric-pressure dc microplasma that can be used to passivate silicon nanocrystals (SiNCs) in ethanol and that stabilizes their optoelectronic properties. We show that microplasma processing enhances the SiNCs photoluminescence intensity by factor of more than ten times and similar to 80 nm redshift of its maximum. The microplasma induces the replacement of hydrogen terminations with hydroxyl-/organic-based bonds. The resulting surface characteristics are responsible for the formation of conductive and stable SiNCs self-organized assemblies extending over 0.5 mm after dewetting on a substrate. (C) 2010 American Institute of Physics. [doi:10.1063/1.3505329]

引用

页数：3

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