Effect of mixing of hydrogen into nitrogen plasma

被引:25
作者
Hirohata, Y [1 ]
Tsuchiya, N [1 ]
Hino, T [1 ]
机构
[1] Hokkaido Univ, Dept Nucl Engn, Kita Ku, Sapporo, Hokkaido 0608628, Japan
关键词
ECR plasma; nitrogen-hydrogen mixed plasma; nitrogen molecular ion; silicon nitriding;
D O I
10.1016/S0169-4332(00)00799-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In surface nitriding by plasma, a major concern is to enhance the density of reactive species of nitrogen. One method is to mix a gas with an ionization potential lower than that of nitrogen. The hydrogen gas mixing was carried out in an electron cyclotron resonance (ECR) nitrogen plasma. Relative density of molecular ion in the vicinity of a substrate was measured by an optical emission spectroscopy. Under a fixed discharge pressure, the densities of nitrogen molecular ion (N-2(+)) and excited molecular nitrogen (N-2*) were observed: they have a maximum, when a ratio of hydrogen pressure to nitrogen pressure was 0.5. Silicon nitriding was also conducted by using the nitrogen-hydrogen mixed plasma. In the case of maximum densities of reactive species, silicon nitriding was most effective. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:612 / 616
页数:5
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