A 2.4-GHz silicon bipolar oscillator with integrated resonator

被引：20

作者：

Soyuer, M

Jenkins, KA

Burghartz, JN

Ainspan, HA

Canora, FJ

Ponnapalli, S

Ewen, JF

Pence, WE

机构：

[1] IBM T. J. Watson Research Center, Yorktown Heights

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1996年 / 31卷 / 02期

关键词：

D O I：

10.1109/4.488006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 2.4-GHz fully-monolithic silicon-bipolar oscillator circuit implemented in a 12-GHz BICMOS technology is presented. The integrated resonator circuit uses three different versions of a 2-nH multilevel inductor and a wideband capacitive transformer, The measured Q factor is 9.3 for the three-level inductor, An oscillator phase noise of -78 dBc/Hz is achieved at 20-kHz offset. The circuit dissipates 50 mW from a 3.6-V supply.

引用

页码：268 / 270

页数：3

共 7 条

[1] A 1.8-GHZ MONOLITHIC LC VOLTAGE-CONTROLLED OSCILLATOR [J].