MoO3 and WO3 based thin film conductimetric sensors for automotive applications

被引:57
作者
Prasad, AK [1 ]
Gouma, PI [1 ]
机构
[1] SUNY Stony Brook, Dept Mat Sci & Engn, Stony Brook, NY 11794 USA
基金
美国国家科学基金会;
关键词
D O I
10.1023/A:1026339216910
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Un-doped semiconducting oxides suitable for automotive gas sensor applications have been studied in this work. Thin films of MoO3 and WO3 were fabricated by ion beam deposition on alumina substrates with gold interdigitated electrodes. The process pressure inside the deposition chamber was 1.6x10(-4) Torr. The oxygen to argon ratio in the secondary plasma was maintained at 5:5 sccm. A stabilization heat treatment of 500degreesC for 8 h was performed for each set of films that produced nanocrystalline structures. Gas sensing tests were carried out at 450degreesC with nitrogen dioxide/ammonia with synthetic air background similar to those realized in diesel automotive exhausts. XRD and electron microscopy studies were performed to understand the microstructure of the thin films following the sensing tests. The MoO3 films were selective to ammonia whereas the WO3 films showed high senstitivity towards NO2 with respect to NH3. An attempt is made to correlate the structural characteristics to the sensing behavior of the materials. (C) 2003 Kluwer Academic Publishers.
引用
收藏
页码:4347 / 4352
页数:6
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