Ultra thin film encapsulation of organic light emitting diode on a plastic substrate

被引：55

作者：

Park, SHK ^{[1
]}

Oh, J ^{[1
]}

Hwang, CS ^{[1
]}

Lee, JI ^{[1
]}

Yang, YS ^{[1
]}

Chu, HY ^{[1
]}

Kang, KY ^{[1
]}

机构：

[1] ETRI, Basic Res Lab, Taejon, South Korea

来源：

ETRI JOURNAL | 2005年 / 27卷 / 05期

关键词：

OLED; thin film passivation; atomic layer deposition (ALD);

D O I：

10.4218/etrij.05.0905.0006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have carried out the fabrications of a barrier layer on a polyethersulfon (PES) film and organic tight emitting diode (OLED) based on a plastic substrate by means of atomic layer deposition (ALD). Simultaneous deposition of 30 nm Al-x film on both sides of the PES film gave a water vapor transition rate (WVTR) of 0.062 g/m(2)/day (@38 degrees C, 100% R.H.). Further, the double layer of 200 nm SiNx, film deposited by plasma enhanced chemical vapor deposition (PECVD) and 20 nm AlOx film by ALD resulted in a WVTR value lower than the detection limit of MOCON. We have investigated the OLED encapsulation performance of the double layer using the OLED structure of ITO / MTDATA (20 nm) / NPD (40 nm) / Al (60 nm) / LiF (1 nm) / Al (75 nm) on a plastic substrate. The preliminary life time to reach 91% of the initial luminance (1300 cd/m(2)) was 260 hours for the OLED encapsulated with 100 nm of PECVD-deposited SiNx and 30 nm of ALD-deposited AlOx.

引用

页码：545 / 550

页数：6

共 15 条

[1] Ultra barrier flexible substrates for flat panel displays [J].