Relationship between the photo-induced degradation characteristics and film structure of a-Si:H films prepared under various conditions

被引：8

作者：

Nishimoto, T ^{[1
]}

Takai, M ^{[1
]}

Kondo, M ^{[1
]}

Matsuda, A ^{[1
]}

机构：

[1] Electrotech Lab, Thin Film Silicon Solar Cells Superlab, Tsukuba, Ibaraki 3058568, Japan

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.916023

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We have investigated the photo-induced degradation characteristics of high growth-rate (similar to 20 Angstrom /s) a-Si:H films prepared under various conditions and find that the stability of the film is closely related to the Si-H-2 bond density in the film. The results obtained by the Schottky cell measurements indicate that highly stable films with low Si-H2 bond density are obtained at moderately high temperatures of around 350 degreesC. As our first trial, we made a small number of nip solar cells at high growth-rate (similar to 20 Angstrom /s) and confirmed the consistency between the result of the Schottky cell behavior and the solar cell performance. The best performance cell we have obtained so far exhibits a 9.3% initial efficiency, with a stabilized efficiency of 7.4% after a 500H, AM1.5, 100mW/cm(2) light exposure.

引用

页码：876 / 879

页数：4

共 6 条

[1]

HAYASHI R, 1998, 2 WCPEC, P929

[2]

NISHIMOTO T, IN PRESS SOL ENERGY

[3] Gas-phase diagnosis and high-rate growth of stable a-Si:H [J].

Takagi, T ;

Hayashi, R ;

Ganguly, G ;

Kondo, M ;

Matsuda, A .

THIN SOLID FILMS, 1999, 345 (01) :75-79

[4] Guiding principles for obtaining stabilized amorphous silicon at larger growth rates [J].

Takai, M ;

Nishimoto, T ;

Takagi, T ;

Kondo, M ;

Matsuda, A .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 266 :90-94

[5]

TAKAI M, IN PRESS APPL PHYS L

[6] Assessment of intrinsic-layer growth temperature to high-deposition-rate a-Si:H n-i-p solar cells deposited by hot-wire CVD [J].

Wang, Q ;

Iwaniczko, E ;

Xu, YQ ;

Nelson, BP ;

Mahan, AH .

AMORPHOUS AND HETEROGENEOUS SILICON THIN FILMS: FUNDAMENTALS TO DEVICES-1999, 1999, 557 :163-168

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