Band structure and many body effects in graphene

被引：28

作者：

Bostwick, A. ^{[1
]}

Ohta, T.

McChesney, J. L.

Seyller, T.

Horn, K.

Rotenberg, E.

机构：

[1] EO Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA

[2] Max Planck Gesell, Fritz Haber Inst, Dept Mol Phys, D-14195 Berlin, Germany

[3] Montana State Univ, Dept Phys, Bozeman, MT 59717 USA

[4] Univ Erlangen Nurnberg, Lehrstuhl Tech Phys, Inst Phys Kondensierten Mat, D-91058 Erlangen, Germany

来源：

EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS | 2007年 / 148卷 / 1期

关键词：

D O I：

10.1140/epjst/e2007-00220-x

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have determined the electronic bandstructure of clean and potassium-doped single layer graphene, and fitted the graphene pi bands to a one- and three-near-neighbor tight binding model. We characterized the quasi-particle dynamics using angle resolved photoemission spectroscopy. The dynamics reflect the interaction between holes and collective excitations, namely plasmons, phonons, and electron-hole pairs. Taking the topology of the bands around the Dirac energy for n-doped graphene into account, we compute the contribution to the scattering lifetimes due to electron-plasmon and electron phonon coupling.

引用

页码：5 / 13

页数：9

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