Electronic structure of embedded carbon nanotubes

被引:19
作者
D'yachkov, PN [1 ]
Makaev, DV [1 ]
机构
[1] Russian Acad Sci, Inst Gen & Inorgan Chem, Moscow 119991, Russia
关键词
D O I
10.1103/PhysRevB.71.081101
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electronic structure of single-wall carbon nanotubes embedded in a crystal matrix is calculated by means of a linear-augmented cylindrical wave method. A delocalization of the nanotube electrons into the matrix region results in a strong band-structure perturbation. In the case of armchair nanotubes, the delocalization is responsible for a high energy shift of the sigma states and growth of the electron density of states at the Fermi level. For the semiconducting nanotubes, it causes a decay of the minimum energy gap and the formation of a metallic state. The effect of embedded nanotube metallization correlates with the transport properties of devices with nanotubes encapsulated in a semiconductor crystal.
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页数:4
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