Oxygen transport from a silica crucible in Czochralski silicon growth

In this work, Czochralski silicon crystals were grown from a limited oxygen source crucible to determine the dominant flow of oxygen transport in silicon melt. The oxygen concentration in silicon crystal was found mainly to be controlled by the upward flow below the growth interface, with the crucible bottom as the dominant oxygen source. In this phenomenon, the region under the growth interface is assumed to remain rich in oxygen. Numerical simulation in the same system as that used in the experiment showed the same tendency. It also indicates that the concentration of this region strongly depends on the free surface region, whose concentration is to a large extent determined by dissolution from the crucible corner, which is heated to the highest temperature during crystal growth.