Buried heterostructure quantum cascade lasers

被引：13

作者：

Beck, M ^{[1
]}

Faist, J ^{[1
]}

Gmachl, C ^{[1
]}

Capasso, F ^{[1
]}

Sivco, DL ^{[1
]}

Baillargeon, JN ^{[1
]}

Cho, AY ^{[1
]}

机构：

[1] Univ Neuchatel, Inst Phys, CH-2000 Neuchatel, Switzerland

来源：

IN-PLANE SEMICONDUCTOR LASERS: FROM ULTRAVIOLET TO MID-INFRARED II | 1998年 / 3284卷

关键词：

quantum cascade laser; buried heterostructure; molecular beam epitaxy;

D O I：

10.1117/12.304449

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the fabrication and characterization of buried heterostructure quantum cascade (BH-QC) lasers. The buried heterostructure is formed by regrowth of InP lateral on the side walls and on top of the InAlAs/InGaAs laser structure by molecular beam epitaxy (MBE) after in situ Surface cleaning. Thermal Cl-2 etching is applied to the etched laser structure to remove the native oxides of the ternaries prior to regrowth of InP. Buried heterostructure QC lasers demonstrated excellent performances with lower threshold current densities (as low as 4.5kA/cm(2) at T=300K) and higher slope efficiencies that me attribute to lower waveguide losses and a better heat dissipation.

引用

页码：231 / 236

页数：6