Controlled growth and field-emission properties of cobalt oxide nanowalls

被引：268

作者：

Yu, T

Zhu, YW

Xu, XJ

Shen, ZX

Chen, P

Lim, CT

Thong, JTL

Sow, CH

机构：

[1] Natl Univ Singapore, Fac Sci, Dept Phys, Singapore 117542, Singapore

[2] Natl Univ Singapore Nanosci & Nanotechnol Initiat, Singapore 117542, Singapore

[3] Natl Univ Singapore, Dept Mech Engn, Singapore 117576, Singapore

[4] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

来源：

ADVANCED MATERIALS | 2005年 / 17卷 / 13期

关键词：

D O I：

10.1002/adma.200500322

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Vertically oriented single-crystalline CO3O4 nanowalls (see Figure) have been successfully fabricated by directly heating Co foil in air using a hot plate. The morphologies of the Co3O4 nanowalls can be controlled by varying the growth temperature and time. The Co3O4 nanowalls show promising field-emission performance that is comparable to many other nanomaterials.

引用

收藏

页码：1595 / +

页数：6

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