3.4-Inch Quarter High Definition Flexible Active Matrix Organic Light Emitting Display with Oxide Thin Film Transistor

被引:24
作者
Hatano, Kaoru [1 ]
Chida, Akihiro [1 ]
Okano, Tatsuya [1 ]
Sugisawa, Nozomu [1 ]
Inoue, Tatsunori [1 ]
Seo, Satoshi [1 ]
Suzuki, Kunihiko [1 ]
Oikawa, Yoshiaki [1 ]
Miyake, Hiroyuki [1 ]
Koyama, Jun [1 ]
Yamazaki, Shunpei [1 ]
Eguchi, Shingo [2 ]
Katayama, Masahiro [2 ]
Sakakura, Masayuki [2 ]
机构
[1] Semicond Energy Lab Co Ltd, Kanagawa 2430036, Japan
[2] Adv Film Device Inc, Shimotsuga, Tochigi 3280114, Japan
关键词
D O I
10.1143/JJAP.50.03CC06
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this paper, we report a 3.4-in. flexible active matrix organic light emitting display (AMOLED) display with remarkably high definition (quarter high definition: QHD) in which oxide thin film transistors (TFTs) are used. We have developed a transfer technology in which a TFT array formed on a glass substrate is separated from the substrate by physical force and then attached to a flexible plastic substrate. Unlike a normal process in which a TFT array is directly fabricated on a thin plastic substrate, our transfer technology permits a high integration of high performance TFTs, such as low-temperature polycrystalline silicon TFTs (LTPS TFTs) and oxide TFTs, on a plastic substrate, because a flat, rigid, and thermally-stable glass substrate can be used in the TFT fabrication process in our transfer technology. As a result, this technology realized an oxide TFT array for an AMOLED on a plastic substrate. Furthermore, in order to achieve a high-definition AMOLED, color filters were incorporated in the TFT array and a white organic light-emitting diode (OLED) was combined. One of the features of this device is that the whole body of the device can be bent freely because a source driver and a gate driver can be integrated on the substrate due to the high mobility of an oxide TFT. This feature means "true" flexibility. (c) 2011 The Japan Society of Applied Physics
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页数:4
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