Strong lateral growth and crystallization via two-dimensional allotropic transformation of semi-metal Bi film

被引:64
作者
Nagao, T [1 ]
Yaginuma, S
Saito, M
Kogure, T
Sadowski, JT
Ohno, T
Hasegawa, S
Sakurai, T
机构
[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
[3] Univ Tokyo, Dept Earth & Planetary Sci, Tokyo 1130033, Japan
[4] Univ Tokyo, Dept Phys, Tokyo 1130033, Japan
关键词
Bi; epitaxial growth; structural transformation; LEED; STM;
D O I
10.1016/j.susc.2005.06.004
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Two-dimensional (2D) nano-objects, such as metallic nanofilms are the most fundamental building blocks for nanoelectronics devices. However, the fabrication of highly ordered nanofilms has been difficult because of well known Stranski-Krastanov growth, which results in rough growth front and high density grains. Here we report on the unusual high-quality film growth of Bi on a Si surface with atomic-level surface/interface smoothness and high film crystallinity. The formation of a newly discovered 2D allotrope was clarified to initiate its strong 2D growth. Above several-monolayer thickness, the 2D allotrope transforms into a single-crystalline film with bulk-like layered structure. Our study unveils the atomistic growth process of nano-sized Bi, and the obtained knowledge here will be generally applicable for the fabrication of various nano-devices using this intriguing material that shows rich thermal, magnetic, electronic properties in nanometer scale. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:L247 / L252
页数:6
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