Ultralow-threshold erbium-implanted toroidal microlaser on silicon

被引:142
作者
Polman, A [1 ]
Min, B
Kalkman, J
Kippenberg, TJ
Vahala, KJ
机构
[1] CALTECH, Dept Appl Phys, Pasadena, CA 91125 USA
[2] FOM, Inst AMOLF, NL-1098 SJ Amsterdam, Netherlands
关键词
D O I
10.1063/1.1646748
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present an erbium-doped microlaser on silicon operating at a wavelength of 1.5 mum that operates at a launched pump threshold as low as 4.5 muW. The 40 mum diameter toroidal microresonator is made using a combination of erbium ion implantation, photolithography, wet and dry etching, and laser annealing, using a thermally grown SiO2 film on a Si substrate as a starting material. The microlaser, doped with an average Er concentration of 2x10(19) cm(-3), is pumped at 1480 nm using an evanescently coupled tapered optical fiber. Cavity quality factors as high as 3.9x10(7) are achieved, corresponding to a modal loss of 0.007 dB/cm, and single-mode lasing is observed. (C) 2004 American Institute of Physics.
引用
收藏
页码:1037 / 1039
页数:3
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