Electrically driven silicon resonant light emitting device based on slot- waveguide

被引:143
作者
Barrios, CA
Lipson, M
机构
[1] Univ Politecn Valencia, Valencia 46022, Spain
[2] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14840 USA
来源
OPTICS EXPRESS | 2005年 / 13卷 / 25期
关键词
D O I
10.1364/OPEX.13.010092
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
An all-silicon in-plane micron-size electrically driven resonant cavity light emitting device (RCLED) based on slotted waveguide is proposed and modeled. The device consists of a microring resonator formed by Si/SiO2 slot-waveguide with a low-index electroluminescent material (erbium-doped SiO2) in the slot region. The geometry of the slotwaveguide permits the definition of a metal-oxide-semiconductor (MOS) configuration for the electrical excitation of the active material. Simulations predict a quality factor Q of 6,700 for a 20 mu m- radius electrically driven microring RCLED capable to operate at a very low bias current of 0.75 nA. Lasing conditions are also discussed. (c) 2005 Optical Society of America.
引用
收藏
页码:10092 / 10101
页数:10
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