TEM of ultra-thin DyBa2Cu3O7-x films deposited on TiO2 terminated SrTiO3

被引：25

作者：

Bals, S

Rijnders, G

Blank, DHA

Van Tendeloo, G

机构：

[1] Univ Antwerp, EMAT, RUCA, B-2020 Antwerp, Belgium

[2] Univ Twente, Low Temp Div, MESA Res Inst, NL-7500 AE Enschede, Netherlands

来源：

PHYSICA C | 2001年 / 355卷 / 3-4期

关键词：

interface arrangement; antiphase boundary; growth mode;

D O I：

10.1016/S0921-4534(01)00034-X

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using pulsed laser deposition ultra-thin DyBa2Cu3O7-x films were deposited on a single terminated (0 0 1) SrTiOr(3) substrate. The initial growth was studied by high-resolution electron microscopy. Two different types of interface arrangements occur and were determined as: bulk-SrO-TiO2-BaO-CuO-BaO-CuO2-Dy-CuO2-BaO bulk and bulk-SrO-TiO2-BaO-CuO2-Dy-CuO2-BaO-CuO-BaO-bulk This variable growth sequence causes structural shifts, resulting in antiphase boundaries with displacement vector R = [0 0 1/3]. as well as local chemical variations. (C) 2001 Elsevier Science B.V. All rights reserved.

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页码：225 / 230

页数：6

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