Core and valence level characterization of the interfacial reaction between partially oxidized Ti films and graphite

被引：7

作者：

Ma, Q ^{[1
]}

Rosenberg, RA ^{[1
]}

机构：

[1] Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA

来源：

APPLIED SURFACE SCIENCE | 1999年 / 140卷 / 1-2期

基金：

美国国家科学基金会;

关键词：

core; valence level characterization; interfacial reaction; partially oxidized Ti films; graphite;

D O I：

10.1016/S0169-4332(98)00477-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The solid state reaction between partially oxidized Ti films and highly oriented pyrolitic graphite (HOPG) was studied by soft X-ray photoelectron spectroscopy (PES). The reaction readily occurs upon room-temperature deposition, and is apparently catalyzed by the presence of oxide species. The interfacial reaction is also characterized by its influence on the surface electronic structure of HOPG through modification of the C 1s core-hole screening process. The characteristics of the electronic structures of the films and the interface are described by analysis of the valence band photoemission spectra. An electron-transfer model, previously suggested by the other workers, may be used to describe this catalytical reaction. (C) 1999 Published by Elsevier Science B.V.

引用

页码：83 / 89

页数：7

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